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BFR 93AW
NPN Silicon RF Transistor * For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 93AW R2s Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 Q62702-F1489 1=B 2=E 3=C
Package SOT-323
Unit V
VCEO VCES VCBO VEBO IC IB Ptot
mA mW
TS 104 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
1)
300
Tj TA Tstg RthJS
150 - 65 ... + 150 - 65 ... + 150 155
C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFR 93AW
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V A 100 nA 100 A 10 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFR 93AW
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
4.5 6 0.62 0.28 1.7 -
GHz pF 0.9 dB 2 3.3 -
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 13 7.5 15 10 -
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-11-1996
BFR 93AW
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 20.011 1.5466 26.834 1.95 3.4649 3.1538 33.388 2.5184 0.72744 1.1061 0 3 V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
137.63 0.33395 59 7.2326 1.0075 0.70393 0.28319 0 0.34565 0 0 0.75935
A V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.93633 2619.3 0.88761 0.70823 0.13193 0.5071 0.17765 1039.5 0.21422 0.75 1.11 300
fA fA V fF V eV K
0.015129 A
0.043806 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996
BFR 93AW
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
400
mW
Ptot
300
250
TS
200
150
TA
100
50 0 0 20 40 60 80 100 120 C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
K/W
RthJS
10 2
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
5
Dec-11-1996
BFR 93AW
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.1 pF
7.0 GHz 6.0 10V 8V 5V 5.5 5.0 4.5 4.0 3.5 2V 3V
Ccb
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2
fT
3.0 2.5 2.0 1.5 1.0 0.7V 1V
0.1 0.0 0 4 8 12 16 V 24
0.5 0.0 0 10 20 30 40
VR
mA IC
60
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
18 dB 10V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
11 dB 5V 3V 2V 9 10V 5V 3V 2V
G
14 12 10 8
G
8 7 6 5 4
1V 6 4 2 0 0 10 20 30 40 mA IC 60 3 1V 2 0.7V 1 0 -1 0 10 20 30 40 0.7V mA IC 60
Semiconductor Group
6
Dec-11-1996
BFR 93AW
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
f = Parameter
16
VCE = Parameter, f = 900MHz
35
IC=30mA
dB
0.9GHz dBm 0.9GHz
G
12
IP3
25
5V 4V 3V 20 2V
10
1.8GHz
8 1.8GHz 15 6 10 4 5 0 0 2 4 6 8 V 12 0 10 20 30 40 1V
2 0
V CE
mA IC
60
Power Gain Gma, Gms = f(f)
VCE = Parameter
34 dB
Power Gain |S21|2= f(f)
VCE = Parameter
32
IC=30mA
dB
IC=30mA
G
28 24 20 16 12 8 4 0 0.0
S21
26 22 18 14 10 6 2 -2 0.0 10V 2V 1V 0.5 1.0 1.5 2.0 2.5 0.7V GHz 3.5 f
10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5
Semiconductor Group
7
Dec-11-1996

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